TSMC has started volume production 2nm (N2) fab in Q4 2025, right on schedule. Built on first-generation nanosheet transistors, N2 delivers full-node gains in both performance and power efficiency. To further elevate capability, TSMC has also introduced low-resistance redistribution layers (RDL) and ultra-high-performance metal-insulator-metal (MiM) capacitors.


N2 stands as the most advanced semiconductor technology in the industry, setting new benchmarks for transistor density and energy efficiency. Its leading nanosheet architecture enables substantial performance and power improvements, meeting the growing demand for energy-efficient computing. With a roadmap of continuous enhancements, N2 and its derivatives are positioned to extend TSMC’s technology leadership well into the future.

A global semiconductor technology leader, TSMC provides the most advanced and comprehensive portfolio of dedicated foundry process technologies.

( all images from TSMC's website )